APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 42 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 150 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 140 w rbsoa reverse bias safe operating area t j = 125c 60a@500v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. q3 11 10 q1 cr1 7 22 13 14 cr3 3 30 29 32 18 19 23 8 15 31 r1 16 4 cr4 cr2 q2 q4 26 27 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 600v i c = 30a @ tc = 80c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? non punch through (npt) fast igbt ? - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated - symmetrical design ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outsta ndi ng perfor ma nce a t hi gh freque nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mo unting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a phase leg of twice the current capability f ull - bridge n p t igbt power module
APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 500a 600 v t j = 25c 1 500 a i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1 ma t j = 25c 1.7 2.0 2.45 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1350 c oes output capacitance 193 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 120 pf q g total gate charge 99 q ge gate ? emitter charge 10 q gc gate ? collector charge v ge = 15v v bus = 300v i c =30a 60 nc t d(on) tur n-o n delay ti me 30 t r rise time 12 t d(off) turn-off delay time 80 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 ? 15 ns t d(on) tur n-o n delay ti me 32 t r rise time 12 t d(off) turn-off delay time 90 t f fall time 21 ns e on tur n-o n switchi ng energy x 0.3 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 ? 0.8 mj x e on includes diode reverse recovery y in accordance with jedec standard jesd24-1 reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 150 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 15 a i f = 15a 1.8 i f = 30a 1.6 v f diode forward voltage i f = 15a t j = 150c 1.6 v t j = 25c 40 t rr reverse recovery time t j = 100c 80 ns t j = 25c 50 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 100c 120 nc
APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 6 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.9 r thjc junction to case diode 2.0 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g package outline 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 6 typical performance curve output characteristics (v ge =15v) t j =-55c t j =25c t j =125c 0 30 60 90 120 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% dut y c y cle transfer characteristics t j =-55c t j =25c t j =125c 0 25 50 75 100 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=60a ic=30a ic=15a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=60a ic=30a ic=15a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-25 0 255075100125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50-25 0 25 50 75100125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 20406080100120 gate charge (nc) v ge , gate to emitter voltage (v) i c = 30a t j = 25c output characteristics (v ge =10v) t j =-55c t j =25c t j =125c 0 25 50 75 100 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5 % d ut y c y cle
APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 6 v ge = 15v 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 6.8 ? v ge =15v, t j =25c v ge =15v, t j =125c 25 50 75 100 125 0 10 20 30 40 50 60 70 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 6.8 ? v ge =15v, t j =125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 6.8 ? t j = 25c t j = 125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 6.8 ? t j =125c, v ge =15v 0 0.25 0.5 0.75 1 0 10203040506070 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector curren t v ce = 400v r g = 6.8 ? t j = 125c 0 0.5 1 1.5 2 0 10203040506070 i ce , collector to emitter current (a) e of f , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 6.8 ? eon, 30a eoff, 30a 0 0.25 0.5 0.75 1 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v)
APTGF30H60T3 APTGF30H60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 6 - 6 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.00001 0.0001 0.001 0.01 0.1 1 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching zcs zvs 0 40 80 120 160 200 240 280 0 1020304050 i c , collector current (a) f ma x , operating frequency (khz) v ce = 400v d = 50% r g = 6.8 ? t j = 125c t c = 75c apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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